tp0610l/t, vp0610l/t, bs250 vishay siliconix document number: 70209 s-41260?rev. h, 05-jul-04 www.vishay.com 1 p-channel 60-v (d-s) mosfet product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) tp0610l ? 60 10 @ v gs = ? 10 v ? 1 to ? 2.4 ? 0.18 tp0610t ? 60 10 @ v gs = ? 10 v ? 1 to ? 2.4 ? 0.12 vp0610l ? 60 10 @ v gs = ? 10 v ? 1 to ? 3.5 ? 0.18 vp0610t ? 60 10 @ v gs = ? 10 v ? 1 to ? 3.5 ? 0.12 bs250 ? 45 14 @ v gs = ? 10 v ? 1 to ? 3.5 ? 0.18 features benefits applications high-side switching low on-resistance: 8 low threshold: ? 1.9 v fast switching speed: 16 ns low input capacitance: 15 pf ease in driving switches low offset (error) voltage low-voltage operation high-speed switching easily driven without buffer drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply, converter circuits motor control tp0610t vp0610t 1 to-226aa (to-92) top view s d g 2 3 to-92-18rm (to-18 lead form) top view d s g 1 2 3 g s d top view 2 3 to-236 (sot-23) 1 bs250 tp0610l vp0610l device marking front view ?s? tp 0610l xxll device marking front view ?s? vp 0610l xxll ?s? = siliconix logo xxll = date code tp0610l vp0610l device marking front view ?s? bs 250 xxll ?s? = siliconix logo xxll = date code bs250 marking code: tp0610t: to wll vp0610t: vowll w = week code ll = lot traceability absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol tp0610l tp0610t vp0610l vp0610t bs250 unit drain-source voltage v ds ? 60 ? 60 ? 60 ? 60 ? 45 v gate-source v oltage v gs 30 30 30 30 25 v continuous drain current t a = 25 c i d ? 0.18 ? 0.12 ? 0.18 ? 0.12 ? 0.18 continuous drain current (t j = 150 c) t a = 100 c i d ? 0.11 ? 0.07 ? 0.11 ? 0.07 a pulsed drain current a i dm ? 0.8 ? 0.4 ? 0.8 ? 0.4 power dissipation t a = 25 c p d 0.8 0.36 0.8 0.36 0.83 w power dissipation t a = 100 c p d 0.32 0.14 0.32 0.14 w thermal resistance, junction-to-ambient r thja 156 350 156 350 150 c/w operating junction and storage temperature range t j , t stg ? 55 to 150 c notes a. pulse width limited by maximum junction temperature. for applications information see an804.
tp0610l/t, vp0610l/t, bs250 vishay siliconix www.vishay.com 2 document number: 70209 s-41260?rev. h, 05-jul-04 specifications (t a = 25 c unless otherwise noted) limits tp0610l/t vp0610l/t bs250 parameter symbol test conditions typ a min max min max min max unit static drain-source v (br)dss v gs = 0 v, i d = ? 10 a ? 70 ? 60 ? 60 drain source breakdown voltage v (br)dss v gs = 0 v, i d = ? 100 a ? 45 v gate-threshold voltage v gs(th) v ds = v gs , i d = ? 1 ma ? 1.9 ? 1 ? 2.4 ? 1 ? 3.5 ? 1 ? 3.5 v v ds = 0 v, v gs = 20 v 10 10 gate-body leakage i gss v ds = 0 v, v gs = 20 v, t j = 125 c 50 na yg gss v ds = 0 v, v gs = 15 v 20 g v ds = ? 48 v, v gs = 0 v ? 1 ? 1 zero gate voltage drain current i dss v ds = ? 48 v, v gs = 0 v, t j = 125 c ? 200 ? 200 a drain current dss v ds = ? 25 v, v gs = 0 v ? 0.5 os v ds = ? 10 v, v gs = ? 4.5 v ? 180 ? 50 on-state drain current b i d(on) v ds = 10 v v gs = 10 v l suffix ? 750 ? 600 ma current b d(on) v ds = ? 10 v, v gs = ? 10 v t suffix ? 220 v gs = ? 4.5 v, i d = ? 25 ma 11 25 drain-source r ds( ) v gs = ? 10 v, i d = ? 0.5 a l suffix 8 10 10 drain-source on-resistance b r ds(on) v gs = ? 10 v, i d = ? 0.5 a, t j = 125 c l suffix 15 20 20 v gs = ? 10 v, i d = ? 0.2 a t suffix 6.5 10 10 14 forward g f v ds = ? 10 v, i d = ? 0.5 a l suffix 20 80 ms forward transconductance b g fs v ds = ? 10 v, i d = ? 0.1 a t suffix 90 60 70 ms diode forward voltage v sd i s = ? 0.5 a, v gs = 0 v ? 1.1 v dynamic input capacitance c iss 15 60 60 output capacitance c oss v ds = ? 25 v, v gs = 0 v f = 1 mhz 10 25 25 pf reverse t ransfer capacitance c rss f = 1 mhz 3 5 5 pf switching c turn-on time t on v dd = ? 25 v, r l = 133 8 10 ns turn-off time t off v dd = 25 v , r l = 133 i d ? 0.18 a, v gen = ? 10 v, r g = 25 8 10 ns notes a. for design aid only, not subject to production testing. vpds06 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
tp0610l/t, vp0610l/t, bs250 vishay siliconix document number: 70209 s-41260?rev. h, 05-jul-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 300 600 900 1200 0246810 0.0 0.2 0.4 0.6 0.8 1.0 012345 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs = 10 v 5 v 4 v v gs ? gate-to-source voltage (v) ? drain current (ma) i d t j = ? 55 c 125 c 25 c 0.0 0.3 0.6 0.9 1.2 1.5 1.8 ? 50 ? 25 0 25 50 75 100 125 150 on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 10 v @ 500 ma v gs = 4.5 v @ 25 ma 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 1.8 i d = 500 ma gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs 0 4 8 12 16 20 0 200 400 600 800 1000 on-resistance vs. drain current i d ? drain current (ma) v gs = 4.5 v v gs = 10 v ? on-resistance ( r ds(on) ) 0 8 16 24 32 40 0 5 10 15 20 25 capacitance v ds ? drain-to-source voltage (v) c ? capacitance (pf) c rss c oss c iss v gs = 0 v 6 v 7 v v gs = 5 v v ds = 30 v v ds = 48 v 8 v r ds(on) ? on-resiistance (normalized)
tp0610l/t, vp0610l/t, bs250 vishay siliconix www.vishay.com 4 document number: 70209 s-41260?rev. h, 05-jul-04 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0246810 on-resistance vs. gate-source voltage v gs ? gate-to-source voltage (v) i d = 500 ma i d = 200 ma ? on-resistance ( r ds(on) ) 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 t j = 25 c t j = 125 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s 10 t j = ? 55 c v gs = 0 v threshold voltage variance over temperature variance (v) v gs(th) ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 0.4 0.5 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a t j ? junction temperature ( c) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 350 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 1 2.5 3 100 600 0.1 power (w) single pulse power, junction-to-ambient time (sec) 1.5 2 0.5 1 10 t a = 25 c
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